Ultrawide Bandgap Semiconductors

<p>1. Fundamental technologies for gallium oxide transistors<br>Masataka Higashiwaki<br>2. Advanced concepts in Ga<SUB>2</SUB>O<SUB>3</SUB> power and RF devices<br>Wenshen Li, Debdeep Jena and Huili Grace Xing<br>3. -(Al<SUB>x</SUB>Ga<SUB>(1−X)</SUB>)<SUB>2</SUB>O<SUB>3</SUB> epitaxial growth, doping and transport<br>Nidhin Kurian Kalarickal and Siddharth Rajan<br>4. Thermal science and engineering of β-Ga2O3 materials and devices<br>Zhe Cheng, Jingjing Shi, Chao Yuan, Samuel Kim and Samuel Graham<br>5. Controlling different phases of gallium oxide for solar-blind photodetector application<br>Xiaolong Zhao, Mengfan Ding, Haiding Sun and Shibing Long<br>6. Nanoscale AlGaN and BN: Molecular beam epitaxy, properties, and device applications<br>Yuanpeng Wu, Ping Wang, Emmanouil Kioupakis and Zetian Mi<br>7. High-Al-content heterostructures and devices<br>Robert Kaplar, Albert Baca, Erica Douglas, Brianna Klein, Andrew Allerman, Mary Crawford and Shahed Reza<br>8. AlN nonlinear optics and integrated photonics<br>Xianwen Liu, Alexander W. Bruch and Hong. X. Tang<br>9. Material epitaxy of AlN thin films<br>Shangfeng Liu and Xinqiang Wang<br>10. Development of AlN integrated photonic platform for octave-spanning supercontinuum generation in visible spectrum<br>Hong Chen, Jingan Zhou, Houqiang Fu and Yuji Zhao<br>11. AlGaN-based thin-film ultraviolet laser diodes and light-emitting diodes<br>Haiding Sun, Feng Wu, Jiangnan Dai and Changqing Chen<br>12. Electrical transport properties of hexagonal boron nitride epilayers<br>Samuel Grenadier, Avisek Maity, Jing Li, Jingyu Lin and Hongxing Jiang</p>