Nonlinear Transistor Model Parameter Extraction Techniques

1. Introduction M. Rudolph; 2. DC and thermal modeling: III-V FETs and HBTs M. Iwamoto, J. Xu and D. E. Root; 3. Extrinsic parameter and parasitic elements in III-V HBT and HEMT modeling S. R. Nedeljkovic, W. J. Clausen, F. Kharabi, J. R. F. McMacken and J. M. Gering; 4. Uncertainties in small-signal equivalent circuit modeling C. Fager, K. Andersson and M. Ferndahl; 5. The large-signal model: theoretical foundations, practical considerations, and recent trends D. E. Root, J. Horn, J. Xu and M. Iwamoto; 6. Large and packaged transistors J. Engelmann, F.-J. Schmückle and M. Rudolph; 7. Characterization and modeling of dispersive effects O. Jardel, R. Sommet, J.-P. Teyssier and R. Quéré; 8. Optimizing microwave measurements for model construction and validation D. Schreurs, M. Myslinski and G. Crupi; 9. Practical statistical simulation for efficient circuit design P. Zampardi, Y. Yang, J. Hu, B. Li, M. Fredriksson, K. Kwok and H. Shao; 10. Noise modeling M. Berroth.