Tanya K. Gachovska,
Jerry L. Hudgins,
Enrico Santi,
Angus Bryant
e.a.
Modeling Bipolar Power Semiconductor Devices
Paperback Engels 2013 9783031013706Levertijd ongeveer 9 werkdagen
Gratis verzonden
Samenvatting
This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.
Specificaties
ISBN13:9783031013706
Taal:Engels
Bindwijze:paperback
Uitgever:Springer International Publishing
Lezersrecensies
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Inhoudsopgave
Introduction to Power Semiconductor Device Modeling.- Physics of Power Semiconductor Devices.- Modeling of a Power Diode and IGBT.- IGBT Under an Inductive Load-Switching Condition in Simulink.- Parameter Extraction.
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