Mid-infrared Optoelectronics

<p>Part One - Fundamentals</p> <p>1. The physics of mid-infrared semiconductor materials and heterostructures</p> <p>Part Two - Light sources</p> <p>2. Mid-infrared light-emitting diodes</p> <p>3. Interband mid-infrared lasers</p> <p>4. Quantum cascade lasers</p> <p>5. High-brightness quantum cascade lasers</p> <p>6. Mid-infrared frequency conversion in quasiphase matched semiconductors</p> <p>Part Three - Photodetectors</p> <p>7. HgCdTe photodetectors</p> <p>8. Quantum cascade detectors: A review</p> <p>9. InAs/GaSb type II superlattices: A developing material system for third generation of IR imaging</p> <p>10. InAsSb-based photodetectors</p> <p>Part Four - New approaches</p> <p>11. Dilute bismide and nitride alloys for mid-IR optoelectronic devices</p> <p>12. Group IV photonics using (Si)GeSn technology toward mid-IR applications</p> <p>13. Intersubband transitions in GaN-based heterostructures</p> <p>14. III–V/Si mid-IR photonic integrated circuits</p> <p>Part Five - Application of mid-IR devices</p> <p>15. Quartz-enhanced photoacoustic spectroscopy for gas sensing applications</p> <p>16. Mid-infrared gas-sensing systems and applications</p>