Defects in Semiconductors
Gebonden Engels 2015 9780128019351Samenvatting
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields.
The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths.
Specificaties
Lezersrecensies
Inhoudsopgave
- Role of Defects in the Dopant Diffusion in Si Peter Pichler
- Electron and Proton Irradiation of Silicon Arne Nylandsted Larsen and Abdelmadjid Mesli
- Ion Implantation Defects and Shallow Junctions in SI and GE Enrico Napolitani and Giuliana Impellizzeri
- Defective Solid-phase Epitaxial Growth of Si Nicholas G. Rudawski, Aaron G. Lind and Thomas P. Martin
- Nanoindentation of Silicon and Germanium Mangalampalli S. R. N. Kiran, Bianca Haberl, Jodie E. Bradby and James S. Williams
- Analytical Techniques for Electrically Active Defect Detection Eddy Simoen, Johan Lauwaert and Henk Vrielinck
- Surface and Defect States in Semiconductors Investigated by Surface Photovoltage Daniela Cavalcoli, Beatrice Fraboni and Anna Cavallini
- Point Defects in ZnO Matthew D. McCluskey
- Point Defects in GaN Michael A. Reshchikov
- Point Defects in Silicon CarbideNaoya Iwamoto and Bengt G. Svensson
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