III-Nitride Electronic Devices

<p>1. Electronic properties of III-nitride materials and basics of III-nitride FETs<br>Peter M. Asbeck<br>2. Epitaxial growth of III-nitride electronic devices<br>Yu Cao<br>3. III-Nitride microwave power transistors<br>Jeong-Sun Moon<br>4. III-Nitride millimeter wave transistors<br>Keisuke Shinohara<br>5. III-Nitride lateral transistor power switch<br>Sang-Woo Han and Rongming Chu<br>6. III-Nitride vertical devices<br>Tohru Oka<br>7. Physics-based III-Nitride device modeling<br>Ujwal Radhakrishna<br>8. Power electronics applications of III-nitride transistors<br>Yifeng Wu<br>9. N-polar III-nitride transistors<br>M.H. Wong and U.K. Mishra<br>10. III-Nitride ultra-wide-bandgap electronic devices<br>Robert J. Kaplar, Andrew A. Allerman, Andrew M. Armstrong, Albert G. Baca, Mary H. Crawford, Jeramy R. Dickerson, Erica A. Douglas, Arthur J. Fischer, Brianna A. Klein and Shahed Reza<br>11. III-Nitride p-channel transistors<br>Akira Nakajima<br>12. Emerging materials, processing and device concepts<br>David J. Meyer, D. Scott Katzer, Matthew T. Hardy, Neeraj Nepal and Brian P. Downey<br>13. Epitaxial lift-off for III-nitride devices<br>Chris Youtsey, Robert McCarthy and Patrick Fay</p>