Semiconductor Growth, Surfaces and Interfaces

Surface reconstruction of GaAs (001) during OMCVD growth. Optical in situ surface control during MOVPE and MBE growth. Lateral quantum size effects created by growth induced surface and interface corrugations on non-(100)-oriented substrates. Fabrication of quantum well wires and vertical quantum wells on submicron gratings by MOVPE. Evolution of surface morphology during epitaxial growth. Reaction models for the epitaxial growth of III-V semiconductors by chemical beam epitaxy. The continuing drama of the semiconductor interface. STM studies of Fermi-level pinning on the GaAs (001) surface. Probing semi-conductor interfaces by transmission electron microscopy. Monitoring growth with X-ray diffraction. Electron states at semiconductor interfaces: the intrinsic and extrinsic charge neutrality levels. Control of electrical barriers at semiconductor heterojunctions by interface doping. In situ characterization and control of compound semiconductor interfaces.