Metal-Semiconductor Schottky Barrier Junctions and Their Applications

Paperback Engels 2012 9781468446579
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Samenvatting

The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal­ semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the larger interest, it was also considered necessary to have the different topics of Schottky barrier junctions written by experts.

Specificaties

ISBN13:9781468446579
Taal:Engels
Bindwijze:paperback
Aantal pagina's:386
Uitgever:Springer US

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Inhoudsopgave

1. Physics of Schottky Barrier Junctions.- 1. Introduction.- 2. Origins of Barrier Height.- 2.1. Schottky-Mott Theory of Ideal Metal-Semiconductor Contact.- 2.2. Modifications to Schottky Theory.- 2.3. Classifications of Metal-Semiconductor Interfaces.- 2.4. Contacts on Reactive Interfaces.- 2.5. Contacts with Surface States and an Insulating Interfacial Layer.- 2.6. Contacts on Vacuum Cleaved Surfaces.- 3. Measurement of Barrier Height.- 3.1. Capacitance-Voltage Measurement.- 3.2. Current-Voltage Measurement.- 3.3. Photoelectric Measurement.- 4. Results of Barrier Height Measurements.- 4.1. Chemically Prepared Surfaces.- 4.2. Vacuum Cleaved Surfaces.- 4.3. Concluding Remarks.- 5. Capacitance-Voltage Characteristics.- 5.1. Electric Field and Potential Distribution in the Depletion Region.- 5.2. Depletion Region Capacitance.- 5.2.1. Ideal Schottky Barrier.- 5.2.2. Effect of Minority Carriers.- 5.2.3. Effect of Interfacial Layer.- 5.2.4. Effect of Deep Traps.- 6. Current-Voltage Characteristics.- 6.1. Transport Mechanisms.- 6.1.1. Diffusion and Thermionic Emission over the Barrier.- 6.1.2. Tunneling through the Barrier.- 6.1.3. Carrier Generation and Recombination in the Junction Depletion Region.- 6.1.4. Minority Carrier Injection.- 6.2. Forward Characteristics.- 6.3. Reverse Characteristics.- 7. Transient Behavior.- 8. Low-Resistance Schottky Barrier Contacts.- References.- 2. Interface Chemistry and Structure of Schottky Barrier Formation.- 1. Introduction.- 2. Perspectives on Schottky Barrier Formation.- 2.1. Introduction.- 2.2. Brief Review of Phenomenological Schottky Barrier Data.- 3. The Chemistry and Structure of the Interfacial Layer.- 3.1. Synopsis of the Layer-by-Layer Evolution.- 3.2. Some Techniques for Studying the Stages of Interface Formation.- 4. Evolution of the Interfacial Layer.- 4.1. Stage 0: The Clean Semiconductor Surface.- 4.1.1. Silicon (100) and (111) Surfaces.- 4.1.2. GaAs (110) and GaAs (100) Surfaces.- 4.2. Stage 1: The Dilute Limit (

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