III-Nitride Semiconductors

Growth

Gebonden EN 2002 9781560329954
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This volume is focused on the growth techniques for III-Nitrides featuring chapters written by leading experts in the field. This unique volume provides a comprehensive review and introduction to growth issues, substrates and characterization of GaN and related compounds for newcomers to the field and stimulus for further advances for experienced researchers. The technical chapters in this volume are focused on various aspects of growth modes, growth techniques such as molecular beam epitaxy, metalorganic chemical vapor deposition, metalorganic vapor phase epitaxy, epitaxial lateral overgrowth, hydride vapor phase epitaxial growth, as well as substrate issues and characterization results.

Specificaties

ISBN13:9781560329954
Taal:EN
Bindwijze:Gebonden
Aantal pagina's:684
Uitgever:Taylor & Francis Inc

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          III-Nitride Semiconductors