1 Some Fundamental Aspects of Plasma-Assisted Etching.- 1.1 Introduction.- 1.2 The Evolution of Plasma Etching Equipment.- 1.3 The Role of Ions in Reactive Ion Etching.- 1.4 The Influence of the Reactor Walls and Other Surfaces.- 1.5 Ion Beam-Based Methods.- 1.6 Summary.- References.- 2 Plasma Fundamentals for Materials Processing.- 2.1 Introduction.- 2.2 Single Particle Motion.- 2.3 Collision Processes.- 2.4 Velocity Distributions.- 2.5 Sheaths.- 2.6 Plasma Transport.- 2.7 Dielectric Properties.- 2.8 Plasma Sources for Thin Films Processing.- References.- 3 Plasma Modeling.- 3.1 Introduction.- 3.2 Historical Perspective.- 3.3 Plasma Modeling Issues.- 3.4 Chemical Reaction Mechanisms.- 3.5 Examples of Application of Plasma Modeling to Design or Optimization.- 3.6 Future Directions of Plasma Modeling.- References.- 4 Plasma Reactor Modeling.- 4.1 Introduction.- 4.2 Reactor Scale Model.- 4.3 Feature Level Modeling.- 4.4 Database Needs.- 4.5 Concluding Remarks.- References.- 5 Overview of Plasma Diagnostic Techniques.- 5.1 Introduction.- 5.2 Plasma Electrical Characterization.- 5.3 Optical Diagnostic Techniques.- References.- 6 Mass Spectrometric Characterization of Plasma Etching Processes.- 6.1 Introduction.- 6.2 Application to Fundamental Studies.- 6.3 Application in Etch Processing Reactors.- 6.4 Summary and Future Directions.- References.- 7 Fundamentals of Plasma Process-Induced Charging and Damage.- 7.1 Introduction.- 7.2 The Origin of Pattern-Dependent Charging.- 7.3 The Notching Effect.- 7.4 Other Profile Effects Influenced by Charging.- 7.5 Gate Oxide Degradation.- 7.6 Charging Reduction Methodology.- 7.7 Concluding Remarks.- References.- 8 Surface Damage Induced by Dry Etching.- 8.1 Introduction.- 8.2 Surface Damage in Si.- 8.3 Surface Damage in III-V Semiconductors.- 8.4 Damage Removal.- 8.5 Summary.- References.- 9 Photomask Etching.- 9.1 Introduction.- 9.2 Optical Lithography.- 9.3 X-Ray Lithography.- 9.4 SCALPEL.- 9.5 EUVL.- 9.6 Ion Projection Lithography.- 9.7 IPL Mask Distortion Issues.- 9.8 Conclusion.- References.- 10 Bulk Si Micromachining for Integrated Microsystems and MEMS Processing.- 10.1 Introduction.- 10.2 Etch Technologies.- 10.3 ECR Results.- 10.4 DRIE Results.- 10.5 DRIE Applications.- 10.6 Conclusions.- References.- 11 Plasma Processing of III-V Materials.- 11.1 Introduction.- 11.2 Dry Etching Techniques.- 11.3 Masking Materials and Methods.- 11.4 Dry Etching Chemistries.- 11.5 Dry Etching of GaAs and Related Materials.- 11.6 Dry Etching of InP and Related Materials.- 11.7 Dry Etching of GaN and Related Materials.- 11.8 Selective Dry Etching of III-V Materials.- 11.9 Conclusion.- References.- 12 Ion Beam Etching of Compound Semiconductors.- 12.1 Introduction.- 12.2 Definitions.- 12.3 Ion Sources.- 12.4 Historic Development.- 12.5 Grid Design, Beam Uniformity, and Divergence.- 12.6 Brief Overview of Etching Kinetics and Chemistry.- 12.7 Surface Quality and Etch Masking.- 12.8 RIBE Etch Technology.- 12.9 CAIBE Etch Technology.- 12.10 Endpoint Detection.- 12.11 Damage.- References.- 13 Dry Etching of InP Vias.- 13.1 Introduction.- 13.2 Past Difficulties in Obtaining High Rate Etching for InP.- 13.3 High Density Plasma Sources for High InP Etch Rate.- 13.4 Measurement of Plasma Heating for InP Etching.- 13.5 Application to Via Hole Etching.- 13.6 Summary.- References.- 14 Device Damage During Low Temperature High-Density Plasma Chemical Vapor Deposition.- 14.1 Introduction.- 14.2 Experimental.- 14.3 Results and Discussion.- 14.4 Summary and Conclusions.- References.- 15 Dry Etching of Magnetic Materials.- 15.1Introduction.- 15.2 Ion Milling.- 15.3 Cl2-Based ICP Etching of NiFe and Related Materials.- 15.4 Copper Dry Etching in Cl2/Ar.- 15.5 CO/NH3 Etching of Magnetic Materials.- 15.6 ECR and ICP Etching of NiMnSb.- 15.7 Dry Etching of LaCaMnOx and SmCo.- 15.8 Summary and Conclusions.- References.
