Mesoscopic Physics and Electronics

1. Introduction — Mesoscopic Systems.- 1.1 Introduction.- 1.2 Length Scales Characterizing Mesoscopic Systems.- 1.2.1 Fermi Wavelength.- 1.2.2 Mean Free Path.- 1.2.3 System Size.- 1.2.4 Thermal Diffusion Length and Thouless Energy.- 1.2.5 Phase Coherence Length.- 1.2.6 Diffusive Regime and Ballistic Regime.- 1.2.7 Quantum Wires, Dots, and Antidots.- 1.2.8 Anderson Localization.- References.- 1.3 Landauer’s Formula.- 1.3.1 Conductance and Transmission Probability.- 1.3.2 Some Applications.- a. Universal Conductance Fluctuations.- b. Conductance Quantization.- References.- 1.4 Fluctuations and Aharonov—Bohm Effect.- 1.4.1 Aharonov—Bohm Effect.- 1.4.2 Universal Conductance Fluctuations.- 1.4.3 Persistent Current.- 1.4.4 Fluctuations of Orbital Susceptibility.- References.- 1.5 Ballistic Electron Transport.- 1.5.1 Quantization of Conductance.- 1.5.2 Interaction Effects on Conductance Quantization.- 1.5.3 Magnetic Focusing.- 1.5.4 Bend Resistance and Transfer Resistance.- 1.5.5 Anomaly in Weak-Field Hall Effect.- References.- 1.6 Coulomb Blockade.- 1.6.1 Introduction.- 1.6.2 Single Electron Tunneling.- 1.6.3 SET Oscillation.- 1.6.4 Tunneling in Superconducting Junctions.- 1.6.5 Coulomb Blockade in Quantum Dots.- 1.6.6 Resonant Transmission and Kondo Effect.- 1.6.7 KTB Transition in Junction Network.- References.- 2. Transport in Quantum Structures.- 2.1 Tomonaga—Luttinger Liquid in Quantum Wires.- 2.1.1 Introduction.- 2.1.2 Tomonaga—Luttinger Liquid.- 2.1.3 Conductance of Finite-Length Quantum Wire.- 2.1.4 Quantized Value of Conductance.- 2.1.5 Mott—Hubbard Insulator.- References.- 2.2 Quantum Wires.- 2.2.1 Magnetoresistance and Boundary-Roughness Scattering.- 2.2.2 One-Dimensional Electron in Slowly Varying Potential.- 2.2.3 Interaction Effects in Quantum Wires.- References.- 2.3 Magnetophonon Resonance in Quantum Wires.- 2.3.1 Introduction.- 2.3.2 Theory.- 2.3.3 Experiments.- References.- 2.4 Quantum Dots and Artificial Atoms.- 2.4.1 Quantum Dots Containing a Few Electrons.- 2.4.2 Atom-like Properties — Shell Filling.- 2.4.3 Atom-like Properties — Spin Effects.- References.- 2.5 Antidot Lattices — Classical and Quantum Chaos.- 2.5.1 Antidot Lattices.- 2.5.2 Commensurability Peaks.- 2.5.3 Aharonov—Bohm Type Oscillation.- 2.5.4 Altshuler—Aronov—Spivak Oscillation.- 2.5.5 Scattering Matrix Formalism.- 2.5.6 Anderson Localization.- References.- 2.6 Electric and Magnetic Lateral Superlattices.- 2.6.1 Lateral Modulation.- 2.6.2 Weiss Oscillation.- 2.6.3 Magnetic Weiss Oscillation.- References.- 2.7 Terahertz Spectroscopy of Nanostructures.- 2.7.1 Introduction.- 2.7.2 Swept-Frequency THz Spectroscopy.- 2.7.3 Electronic States in Single Quantum Wire Structure.- 2.7.4 Blackbody Radiation from Hot Carriers.- 2.7.5 Summary.- References.- 2.8 Wannier—Stark Effect in Transport.- 2.8.1 Wannier—Stark Effect.- 2.8.2 Zener Tunneling and Wannier—Stark States.- 2.8.3 Measurements of Zener Current through a p-i-n Diode.- References.- 3. Quantum Hall Effect.- 3.1 Crossover from Quantum to Classical Regime.- 3.1.1 Bulk Versus Edge Current Picture.- 3.1.2 Edge Transport and Bulk States.- 3.1.3 Voltage Distribution.- 3.1.4 Summary.- References.- 3.2 Edge States and Nonlocal Effects.- 3.2.1 What Is Edge Current?.- 3.2.2 Halperin’s Edge Current.- 3.2.3 Local Current Distribution.- 3.2.4 Büttiker’s Edge Current.- 3.2.5 Nonlocal Resistance.- References.- 3.3 Magnetocapacitance and Edge States.- 3.3.1 Spatial Dispersion of Edge States.- 3.3.2 Edge States Width and Magnetocapacitance.- References.- 4. Electron-Photon Interaction in Nanostructures.- 4.1 Introduction.- References.- 4.2 Theory of Electron-Photon Interaction.- 4.2.1 Electron and Hole Operators in Insulating Solids.- 4.2.2 Effective-Mass Approximation.- 4.2.3 Optical Matrix Elements.- 4.2.4 Quantum States in Nanostructures.- 4.2.5 Quantum Optical Phenomena in Nanostructures.- References.- 4.3 Electron-Photon Interaction in Microcavities.- 4.3.1 Concept of Spontaneous Emission Control.- a. Outline.- b. Spontaneous Emission in a Single Mode.- c. Spontaneous Emission in Free Space.- d. Controlled Spontaneous Emission.- 4.3.2 Experimental Results of Spontaneous Emission Control.- 4.3.3 Cavity-Polariton Effects.- References.- 4.4 Photonic Crystals.- 4.4.1 Photonic Crystals and Spontaneous Emission Control.- 4.4.2 Band Structure of Photonic Crystals.- 4.4.3 Technologies of Photonic Crystals.- References.- 4.5 Microcavity Surface Emitting Lasers.- 4.5.1 Overview.- 4.5.2 Technology for Low Threshold Surface Emitting Lasers.- 4.5.3 New Materials for Surface Emitting Lasers.- References.- 4.6 Toward Lasers of the Next Generation.- 4.6.1 Quantum Dot Lasers.- 4.6.2 Microcavity Quantum Dot Lasers.- References.- 5. Quantum-Effect Devices.- 5.1 Introduction.- References.- 5.2 Electron-Wave Reflection and Resonance Devices.- 5.2.1 Introduction.- 5.2.2 Epitaxial Growth of CoSi2/CaF2 on Si.- 5.2.3 Resonant Tunneling Transistor.- 5.2.4 Observation of Hot Electron Interference.- 5.2.5 Field-Effect Quantum Device.- References.- 5.3 Electron-Wave Coherent Coupling Devices.- 5.3.1 Coherent Coupling in Double Quantum Well.- 5.3.2 Electron Directional Coupler.- 5.3.3 Coherent Oscillation Devices.- 5.3.4 Bloch Oscillation Devices.- 5.3.5 Coherent Oscillations in ac-Field.- References.- 5.4 Electron-Wave Diffraction Devices.- 5.4.1 Electron Wavefront and Its Manipulation.- 5.4.2 Coherence of Electron Wave.- a. Phase Breaking Time Required for Interference.- b. Energy Sharpness Required for Interference.- c. Phase Breaking Time Estimated.- d. Coherence of Electron Wave.- 5.4.3 Diffraction of Hot Electron Wave.- References.- 5.5 Devices Using Ultimate Silicon Technology.- 5.5.1 Future of VLSI Device Technology.- 5.5.2 Silicon Single-Electron Devices.- 5.5.3 Integration of MOS and Single-Electron Devices.- References.- 5.6 Circuit Systems Using Quantum-Effect Devices.- 5.6.1 Information Processing Architectures.- 5.6.2 Binary-Decision-Diagram Circuits.- 5.6.3 Local-Interaction Logic Circuits.- 5.6.4 Analog Computation Systems.- 5.6.5 MOBILE Circuit Systems.- 5.6.6 RHET Circuit Systems.- References.- 6. Formation and Characterization of Quantum Structures.- 6.1 Introduction.- References.- 6.2 Quantum Wires and Dots by MOCVD (I).- 6.2.1 Quantum Wires on Vicinal Surfaces.- 6.2.2 Quantum Dot Formation on Masked Substrates.- References.- 6.3 Quantum Wires and Dots by MOCVD (II).- 6.3.1 Quantum Wires by Selective MOCVD.- 6.3.2 Quantum Dots by Selective MOCVD.- 6.3.3 Quantum Dots in 2D V-Grooves.- 6.3.4 Self-Assembled InGaAs Quantum Dots.- 6.3.5 Use of Spinodal Phase Separation.- References.- 6.4 Quantum Wires on Vicinal GaAs (110) Surfaces.- 6.4.1 Introduction.- 6.4.2 Step Structures.- 6.4.3 AlGaAs Quantum Wires.- 6.4.4 GaAs Quantum Wires.- References.- 6.5 Tilted T-Shaped and (775)B Quantum Wires.- 6.5.1 Introduction.- 6.5.2 GaAs/Al0.3Ga0.7As Tilted T-shaped QWRs.- 6.5.3 Fabrication of GaAs/A10.3Ga0.7As Tilted T-QWRs.- a. Cathodoluminescence Measurements.- b. Calculation of Electron and Hole States in T-QWRs.- 6.5.4 Naturally Formed QWRs on (775)B GaAs Substrates.- a. MBE Growth of GaAs/(GaAs)m(AlAs)n QWRs.- b. Photoluminescence Measurements.- References.- 6.6 SiGe Quantum Structures.- 6.6.1 Band Modification by SiGe/Si Heterostructures.- 6.6.2 SiGe Quantum Wells.- 6.6.3 SiGe Quantum Wires and Dots.- References.