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Polycrystalline Semiconductors II

Proceedings of the Second International Conference Schwäbisch Hall, Fed. Rep. of Germany, July 30–August 3,1990

Paperback Engels 2011 9783642763878
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Samenvatting

This book contains papers that were presented at the International Conference on Polycrystalline Semiconductors - Grain Boundaries, Dislocations and Het­ erointerfaces - (POLYSE '90), which was held in Schwabisch Hall, FRG, from July 30 to August 3, 1990. This conference was a satellite conference of the 20th International Conference on the Physics of Semiconductors. POLYSE '90, like its predecessor POLYSE '88, brought together scientists from research in­ stitutions and industrial laboratories with a view to bridging the gap between fundamental and technological aspects of polycrystalline semiconductors. With this aim, a total of 14 recognized scientists from universities and in­ dustry were invited to review their fields of interest. The expert presentations of these scientists were complemented by contributed papers and poster con­ tributions, the authors of which were additionally allowed four minutes for an oral summary. This combination of different types of presentation led to very lively and stimulating discussions.

Specificaties

ISBN13:9783642763878
Taal:Engels
Bindwijze:paperback
Aantal pagina's:549
Uitgever:Springer Berlin Heidelberg

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Inhoudsopgave

I Dislocations: Structure.- II Dislocations: Optical and Electronic Properties.- III Beam Induced Characterization.- IV Grain Boundaries: Theory.- V Grain Boundaries in Silicon: Structure, Chemistry and Transport.- VI Gettering and Hydrogen Passivation in Silicon.- VII Polycrystalline Material for Microelectronic Devices.- VIII Silicon Crystallization.- IX Non-silicon Polycrystalline Materials.- X New Solar Cell Materials.- XI Heterointerfaces: Structure.- XII Heterointerfaces: Devices.- Index of Contributors.- Materials Index.

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