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Gas Source Molecular Beam Epitaxy

Growth and Properties of Phosphorus Containing III-V Heterostructures

Paperback Engels 2011 9783642781292
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Samenvatting

The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.

Specificaties

ISBN13:9783642781292
Taal:Engels
Bindwijze:Paperback
Aantal pagina's:428
Uitgever:Springer Berlin Heidelberg

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          Gas Source Molecular Beam Epitaxy