Strain-Induced Effects in Advanced MOSFETs

Paperback Engels 2016 9783709119334
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Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

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ISBN13:9783709119334
Taal:Engels
Bindwijze:Paperback
Uitgever:Springer Vienna

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          Strain-Induced Effects in Advanced MOSFETs