Yabin Sun
Research on the Radiation Effects and Compact Model of SiGe HBT
Paperback Engels 2019 9789811351815
Verwachte levertijd ongeveer 9 werkdagen
Samenvatting
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
Specificaties
ISBN13:9789811351815
Taal:Engels
Bindwijze:paperback
Uitgever:Springer Nature Singapore
Serie:Springer Theses
Lezersrecensies
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Inhoudsopgave
Introduction.- Ionization damage in SiGe HBT.- Displacement damage with swift heavy ions in SiGe HBT.- Single-event transient induced by pulse laser microbeam in SiGe HBT.- Small-signal equivalent circuit of SiGe HBT based on the distributed effects.- Parameter extraction of SiGe HBT models.- Conclusion.
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