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SIC MATERIALS AND DEVICES - VOLUME 1

Gebonden Engels 2006 9789812568359
€ 154,42
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Samenvatting

After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.

Specificaties

ISBN13:9789812568359
Taal:Engels
Bindwijze:Gebonden
Aantal pagina's:344
Uitgever:World Scientific Publishing Co Pte Ltd

Lezersrecensies

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Inhoudsopgave

SiC Material Properties (G Pensl et al.); SiC Homoepitaxy and Heteroepitaxy (A S Bakin); Ohmic Contacts to SiC (F Roccaforte et al.); Silicon Carbide Schottky Barrier Diode (J H Zhao et al.); High Power SiC PIN Rectifiers (R Singh); Silicon Carbide Diodes for Microwave Applications (K Vassilevski); SiC Thyristors (M E Levinshtein et al.); Silicon Carbide Static Induction Transistors (G C DeSalvo).

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€ 154,42
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          SIC MATERIALS AND DEVICES - VOLUME 1